发明名称 Process for producing semiconductor integrated circuit device
摘要 An object of the present invention is to prevent formation of a badly situated via metal in a Damascene wiring portion in multiple layers having an air-gap structure. In the present invention, a via is completely separated from an air-gap 45 by forming an interlayer insulating film 44 having the air-gap 45 between adjacent Damascene wiring portions after forming a sacrifice film pillar 42 from a selectively removable insulating film in a formation region of a connection hole. The present invention can provide multiple-layered buried wiring in which a high reliable via connection and a reduced parasitic capacitance due to the air-gap are achieved.
申请公布号 US2007111508(A1) 申请公布日期 2007.05.17
申请号 US20060598084 申请日期 2006.11.13
申请人 HITACHI, LTD. 发明人 HAYASHI HIROYUKI;OSHIMA TAKAYUKI;AOKI HIDEO
分类号 H01L21/4763 主分类号 H01L21/4763
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