| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing SIMOX (Separation by IMplanted OXygen) of high quality which has an SOI layer of thickness less than 100 nm and is capable of suppressing generation of defects. SOLUTION: In the SIMOX substrate manufacturing method for forming a buried oxidized layer and a surface single crystal silicon layer by injecting oxygen ions into a silicon single crystal substrate and then performing high temperature heat processing, the thickness of a remaining SOI layer after high temperature annealing or ITOX processing to be performed according to necessity after the high temperature annealing is≥130 nm, and then the SOI layer is thermally oxidized at temperature <1,100°C to thin the thickness of the SOI layer to less than 100 nm. Consequently, the SIMOX substrate of high quality which has the SOI layer of thickness <100 nm and is capable of suppressing generation of defects is obtained. COPYRIGHT: (C)2008,JPO&INPIT
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