发明名称 |
NONVOLATILE SEMICONDUCTOR STORAGE DEVICE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To perform an efficient screening about a defective cell of a flash memory. <P>SOLUTION: This problem is solved by providing a nonvolatile semiconductor storage device having such features that: one terminal of a first transistor of a power supply circuit for source in the nonvolatile semiconductor storage device is connected with one terminal of a second transistor and another terminal of the first transistor is connected to the power supply; one terminal of a third transistor is connected with another terminal of the second transistor and another terminal of the third transistor is grounded; an input of the second transistor is connected with an output of an operational amplifier; and one input of the operational amplifier is a reference potential and another input is connected with a junction between the first transistor and second transistor, and this junction is connected with a source line. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
申请公布号 |
JP2008159135(A) |
申请公布日期 |
2008.07.10 |
申请号 |
JP20060345712 |
申请日期 |
2006.12.22 |
申请人 |
TOSHIBA CORP |
发明人 |
OGAWA MIKIO;ISOBE KATSUAKI |
分类号 |
G11C29/50;G11C16/04;G11C16/06;G11C17/00 |
主分类号 |
G11C29/50 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|