METHOD FOR MANUFACTURING SOI WAFER

摘要

A manufacturing method of the SOI wafer is provided to increase the uniformity of film thickness and flat the surface of SOI layer. A manufacturing method of the SOI wafer comprises the following steps: the step for forming the ion implantation layer by injecting the hydrogen ion or rare gas to the surface of the donor wafer(10) consisting of the silicon wafer on which the oxide film is formed, or the silicon wafer; the step for performing the plasma activation processing to the ion-implanted side(12) of the donor wafer and the surface of the handle wafer(20) which is welded to the ion-implanted side; the step for adhering the ion-implanted side of the donor wafer to the surface of the handle wafer closely; the step for performing the thermal process of 600‹C-1000‹C after forming the SOI layer(31) by mechanically peeling off the donor wafer; the step for polishing the surface of SOI layer with the chemical mechanical polishing.