发明名称 |
SEMICONDUCTOR FIELD-EFFECT TRANSISTOR, MEMORY CELL AND MEMORY DEVICE |
摘要 |
<p>Semiconductor device formed by a first conductive strip of semiconductor material; a control gate region of semiconductor material, facing a channel portion of the first conductive strip, and an insulation region arranged between the first conductive strip and the control gate region. The first conductive strip includes a conduction line having a first conductivity type and a control line having a second conductivity type, arranged adjacent and in electrical contact with each other, and the conduction line forms the channel portion, a first conduction portion and a second conduction portion arranged on opposite sides of the channel portion.</p> |
申请公布号 |
EP1997148(A1) |
申请公布日期 |
2008.12.03 |
申请号 |
EP20060745237 |
申请日期 |
2006.03.20 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
ROLANDI, PAOLO;CALLIGARO, CRISTIANO;PASCUCCI, LUIGI |
分类号 |
H01L29/78;H01L21/822;H01L27/06;H01L27/115;H01L27/12 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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