| 摘要 |
The method of forming the metal wiring of the semiconductor device is provided to lower the depth of the trench by increasing the over etch time in the reactive ion etching process and to improve the resistance of M1. The method of forming the metal wiring of the semiconductor device comprises as follows. A step is for depositing the insulating layer(60a) on the semiconductor substrate(100). A step is for forming the first oxide film(105) in the top portion of dielectric layer. A step is for forming the contact hole in the first oxide film through the M1C process. A step is for depositing the barrier metal(BM) on the side wall of the contact hole and for filling the conductive material in the contact hole. A step is for depositing the interlayer insulating film in the first oxide film and the upper part of the contact hole and forming the second oxide film in the upper part of interlayer insulating film. A step is for depositing photoresist in the upper part of the second oxide film except for the peripheral region of the seam of the conductive material and for depositing additionally the mask in the seam area of the conductive material. A step is for performing the dry etching using the deposited photoresist and the mask. A step is for performing the reactive ion etching(RIE) process by increasing the time over etch time more than the preexistence condition(POR) after the dry etching.
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