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发明名称
Method for forming isolation layer of semiconductor device
摘要
申请公布号
KR100871373(B1)
申请公布日期
2008.12.02
申请号
KR20020077987
申请日期
2002.12.09
申请人
发明人
分类号
H01L21/762;H01L21/76
主分类号
H01L21/762
代理机构
代理人
主权项
地址
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