A METHOD OF PLASMA ION DOPING PROCESS AND AN APPARATUS THEREOF

摘要

A plasma ion-doping method is provided to prevent a deterioration of the performance of the semiconductor device generated by ion doping. The plasma ion-doping method is provided. The wafer(30) is introduced on the susceptor(20) within the reaction chamber(10). The ion doping source gas(40) is injected from the upper part of the reaction chamber to mask plasma. The control gas(50) is supplied from the lower part of the reaction chamber. The ions are doped in the wafer. The ion doping gas is a halide gas. The control gas is a deposition gas. The deposition gas is a silane based gas. The diluent gas is an inert gas including at least one of He, Ne, Ar, Xe. The control gas is flown in the horizontal direction to the surface of wafer. The lower part gas injecting holes are formed around the susceptor.