| 摘要 |
An OTP memory cell according to the present invention includes: a semiconductor substrate including a lower electrode forming region having a lower electrode formed therein, a diffusion layer forming region having a source and a drain formed therein, a first trench-type insulating region, and a second trench-type insulating region; an upper electrode being in contact with the first trench-type insulating region and formed on the lower electrode with the first insulating film interposed therebetween; and a gate electrode being in contact with the second trench-type insulating region and formed on a channel region with the second insulating film interposed therebetween, in which a shape of at least a part of an end of the lower electrode forming region in contact with the first insulating film is sharper than a shape of an end of the channel region in contact with the second insulating film. |
