MAGNETIC MEMORY WITH MAGNETIC TUNNEL JUNCTION

摘要

The invention relates to a magnetic memory with thermally-assisted writing in which each memory point includes at least a reference magnetic layer having a magnetisation permanently oriented in the same direction upon a reading of the memory point; a so-called free storage magnetic layer having a variable magnetisation direction; an insulation layer provided between the reference layer and the storage layer. The reference layer has a magnetisation direction that is polarised in a direction that is substantially identical during a reading by magnetostatic interaction with another so-called polarised fixed magnetisation layer.