NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A non-volatile memory device and a method of manufacturing the same are disclosed. In the non-volatile memory device, first gate structures and first impurity diffusion regions are formed on a substrate. A first insulating interlayer is formed on the substrate. A semiconductor layer including second gate structures and second impurity diffusion regions is formed on the first insulating interlayer. A second insulating interlayer is formed on the semiconductor layer. A contact plug connecting the first impurity diffusion regions to the second impurity diffusion regions is formed. A common source line connected to the contact plug is formed on the second insulating interlayer. The common source line connected to the first and second impurity diffusion regions is formed over a top semiconductor layer.