发明名称 FILM FORMATION METHOD AND METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE
摘要 The present invention is to provide the depositing method with a superior throughput which forms uniform and homogeneous film while forming film and improving the efficiency of material and suppressing the manufacturing cost. A film formation method comprises a step for forming the mixed layer with the depositing material and binder material on a main surface of the first substrate(101), a step for arranging the second substrate one side major surface of the second substrate(104) and mixed layer is faced, and a step forming the layer including the depositing material in one side main part above surface of the second substrate by performing a heating processing on the backside surface of one side major surface of the first substrate.
申请公布号 KR20080096381(A) 申请公布日期 2008.10.30
申请号 KR20080029454 申请日期 2008.03.31
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 IKEDA HISAO;IBE TAKAHIRO;AOYAMA TOMOYA
分类号 H01L21/20;C23C14/12;C23C14/24;H01L21/205;H01L21/324;H01L51/50;H05B33/10 主分类号 H01L21/20
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