发明名称 |
FILM FORMATION METHOD AND METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE |
摘要 |
The present invention is to provide the depositing method with a superior throughput which forms uniform and homogeneous film while forming film and improving the efficiency of material and suppressing the manufacturing cost. A film formation method comprises a step for forming the mixed layer with the depositing material and binder material on a main surface of the first substrate(101), a step for arranging the second substrate one side major surface of the second substrate(104) and mixed layer is faced, and a step forming the layer including the depositing material in one side main part above surface of the second substrate by performing a heating processing on the backside surface of one side major surface of the first substrate.
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申请公布号 |
KR20080096381(A) |
申请公布日期 |
2008.10.30 |
申请号 |
KR20080029454 |
申请日期 |
2008.03.31 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
IKEDA HISAO;IBE TAKAHIRO;AOYAMA TOMOYA |
分类号 |
H01L21/20;C23C14/12;C23C14/24;H01L21/205;H01L21/324;H01L51/50;H05B33/10 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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