<p>A plasma etching apparatus is provided with a chamber (1) which can be depressurized; a placing section (3) which supports in the chamber (1) a subject (2) to be processed; a dielectric member (5) which seals an upper opening of the chamber (1); and a coil (4) arranged outside the dielectric member (5). The coil (4) generates plasma (6) in the chamber (1) by inductive coupling and etches the subject (2). The dielectric member (5) has discontinuous recessed sections (5c). The portion other than the recessed sections (5c) on the dielectric member (5) is permitted to be a thick section (5b). The thickness of the dielectric member (5) of therecessed sections (5c) is less than that of the thick section (5b). The recessed sections (5c) are arranged in accordance with the distribution density of a conductor configuring the coil (4).</p>
