| 摘要 |
<p>An exposure apparatus is provided to improve the uniformity of CD(Critical Dimension) of the wafer pattern by mounting an asymmetry adjustment filter thereinto. An exposure apparatus of the semiconductor device is comprised of light source for exposure, an asymmetry adjustment filter(160), a photomask, a projection lens, a wafer, and a wafer stage. The asymmetry adjustment filter asymmetrically controls the intensity of light emitted from the light source of exposure. The light in which the light intensity is controlled by the asymmetry adjustment filter is transmitted to the photomask. The light passing through the photomask is projected onto the projection lens. The light penetrating the projection lens is imaged on the wafer. The wafer is mounted at the wafer stage.</p> |
