| 摘要 |
A method for fabricating a CMOS image sensor improves the characteristics of device by preventing a pad from being contaminated without damaging a micro-lens. The method includes steps of forming a device protection layer on a semiconductor substrate including at least one photo-sensing device and at least one metal pad disposed in a logic circuit area corresponding to the at least one photo-sensing device, the device protection layer covering the at least one metal pad; forming each of a first planarization layer, a color filter layer, and a second planarization layer in sequence on the device protection layer in correspondence with the at least one photo-sensing device; forming on the second planarization layer a material layer for micro-lens formation; exposing a predetermined portion of the metal pad by selectively etching the device protection layer; and forming a micro-lens for directing incident light onto the at least one photo-sensing device by reflowing, after the exposing step, the material layer for micro-lens formation.
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