发明名称 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
摘要 A plasma processing method, for performing a plasma process on a target substrate by generating a plasma between an upper electrode and a lower electrode facing each other by means of applying a radio frequency power therebetween, includes applying a DC voltage of a positive or negative polarity to an inner electrode of an electrostatic chuck on the lower electrode to attract and hold the target substrate thereon; and changing the positive or negative polarity of the DC voltage applied to the inner electrode of the electrostatic chuck to an opposite polarity thereto between a time when the application of the radio frequency power from the radio frequency power supply is started to perform the plasma process of the target substrate and a time when the plasma process is completed.
申请公布号 US2008242086(A1) 申请公布日期 2008.10.02
申请号 US20080057518 申请日期 2008.03.28
申请人 TOKYO ELECTRON LIMITED 发明人 MATSUMARU HIROKI;NAKAO NOBUTAKA;KOMATSU KENJI;TAKAHASHI SYUICHI
分类号 H01L21/44 主分类号 H01L21/44
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