| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a substrate processing method, capable of executing high-temperature processing and rotation processing for a substrate. SOLUTION: In SPM (sulfuric acid hydrogen peroxide mixture) processing using SPM of about 200°C, a wafer W is held in a substrate lower part holding section 2. Since the substrate lower part holding section 2 supports the lower surface of the wafer W, it can be free from application of a force not less than the weight of the wafer W. In SC1 processing or spin-dry processing, the wafer W is held in a substrate upper portion holding section 3. Since the SC1 processing and spin-dry processing are executed in an environment with a temperature lower than that in the SPM processing, the deformation of the substrate upper part holding section 3 can be prevented even if the wafer W is firmly held by the substrate upper part holding section 3. COPYRIGHT: (C)2009,JPO&INPIT |
