| 摘要 |
<p>A method for manufacturing a crystalline semiconductor film and a method for manufacturing thin film transistor are provided to omit a process for removing a capping film by removing the capping film at the same time when a semiconductor film is crystallized. An amorphous semiconductor film(102) is formed on a substrate. A capping film(103) is formed on the amorphous semiconductor film. A first laser(110) is irradiated through the capping film, such that the amorphous semiconductor film is crystallized. A second laser(111) is irradiated through the capping film, such that the capping film is removed. The second laser is a femtosecond laser. The second laser is irradiated, while the first laser is irradiated.</p> |
