发明名称 |
Pinned photodiode (PPD) pixel with high shutter rejection ratio for snapshot operating CMOS sensor |
摘要 |
A pixel image sensor has a high shutter rejection ratio that prevents substrate charge leakage to a floating diffusion storage node of the pixel image sensor and prevents generation of photoelectrons within the floating diffusion storage node and storage node control transistor switches of the pixel image sensor. The pixel image sensor that prevents substrate charge leakage of photoelectrons from pixel image sensor adjacent to the pixel image sensor. The pixel image sensor is fabricated on a substrate with an isolation barrier and a carrier conduction well. The isolation barrier formed underneath the floating diffusion storage node allows effective isolation by draining away the stray carriers and preventing them from reaching the floating diffusion storage node. The carrier conduction well in combination with the deep N-well isolation barrier separates the pinned photodiode region from the deep N-well isolation barrier that is underneath the floating diffusion storage node.
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申请公布号 |
US7423302(B2) |
申请公布日期 |
2008.09.09 |
申请号 |
US20050284300 |
申请日期 |
2005.11.21 |
申请人 |
DIGITAL IMAGING SYSTEMS GMBH |
发明人 |
DOSLUOGLU TANER;YANG GUANG |
分类号 |
H01L31/062;H01L31/113 |
主分类号 |
H01L31/062 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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