| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser device capable of suppressing the deterioration of the manufacturing yield and the device characteristics. SOLUTION: This nitride semiconductor laser device 100 is formed on an n-type GaN substrate 1 and comprises a plurality of nitride based semiconductor layers (2-7) containing an active layer 3, a convex ridge portion 8 extending in the direction ([1-100] direction) orthogonal to a resonator surface 30, and an Au layer consisting of a material different from that of the nitride based semiconductor layers (2-7), and is provided with ridge protective layers 12 formed on one side and the other side of the ridge portion 8 respectively. The ridge protective layer 12 has a top face arranged higher than the ridge portion 8, and is formed extending along the ridge portion 8 (in the [1-100] direction). Further, the ridge protective layer 12 is formed so that the side end face 12a thereof is coplanar with the resonator surface 30. COPYRIGHT: (C)2008,JPO&INPIT
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