| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and apparatus for treating a surface capable of efficiently removing an oxide film generated inside fine connecting holes and the like with dry etching. SOLUTION: A workpiece W, on the surface of which an oxide is generated, is carried into a treating vessel 10, whose inside is kept vacuum. A mixture of N<SB>2</SB>and H<SB>2</SB>gases is introduced into a plasma generating section 30, is turned into a plasma, and respective activated gas species are formed. The activated gas species are flowed toward the workpiece, while NF<SB>3</SB>gas is added thereto, and the activated gas is formed. The workpiece is cooled to a predetermined temperature or lower by a cooling means 22, and is exposed to the activated NF<SB>3</SB>gas. The workpiece reacts with the gas, and the oxide is changed to form a reacted film on the surface of the workpiece W. Supplies of N<SB>2</SB>, H<SB>2</SB>, and NF<SB>3</SB>gases are stopped, and the object to be treated is heated to a predetermined temperature by a heating means 19 to remove the reacted film by sublimation. COPYRIGHT: (C)2008,JPO&INPIT
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