| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to widen a width of an active region while a width of the semiconductor device by forming a trench on a part of the active region and depositing a laminated layer on an upper of the trench. A first trench is formed on an active region of a semiconductor substrate(102). A gate oxide layer(106) is formed on the semiconductor substrate including the first trench. A first conductive layer(108) is formed on the gate oxide layer. The first conductive layer, the gate oxide layer, and the semiconductor layer are etched to form a second trench in an isolation layer. An isolation layer(112) is formed in a region on which the second trench is formed. After the isolation layer is formed, a dielectric(114) is formed on the first conductive layer and the isolation layer, and then a second conductive layer(116) is formed on the dielectric. A corner of the first trench is rounded.</p> |
