THIN FILM WIRING LAYER AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a protective layer which prevents the oxidation of a Cu electrode without increasing a wiring resistance of a thin film wiring using Cu as a conductor layer during dielectric calcination and which avoids breakdown voltage failure caused by air bubbles remaining on the side surface of the electrode, and to provide a method of forming the protective layer without applying an environmental load. SOLUTION: Ni, which is a second protective layer, is formed on a Cu exposed portion on the side surface and the upper surface continuous to the side surface of a Cr/Cu/Cr electrode by electroless plating. When a coating region of the first protective layer is set to L1, a coating region of the second protective layer is set to L2, and the coverage of an Ni protective layer to CUwhich is a conductor layer is set to X, X(%)=L2/(L1+L2)×100≤36 is satisfied. COPYRIGHT: (C)2009,JPO&INPIT