发明名称 |
Interconnect substrate, semiconductor device, methods of manufacturing the same, circuit board, and electronic equipment |
摘要 |
A first conductive layer is formed. An insulating layer is formed so that at least a part of the insulating layer is disposed on the first conductive layer. A second conductive layer is formed so that at least a part of the second conductive layer is disposed on the insulating layer over the first conductive layer. Each of the first and second conductive layers is formed by discharging drops of a solvent containing fine particles of a conductive material. The insulating layer is formed by discharging drops of a solvent containing fine particles of an insulating material.
|
申请公布号 |
US7413975(B2) |
申请公布日期 |
2008.08.19 |
申请号 |
US20060279078 |
申请日期 |
2006.04.07 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
OTSUKI TETSUYA |
分类号 |
H01L21/4763;H05K3/10;H01L21/48;H01L23/12;H01L23/13;H01L23/495;H01L23/498;H05K1/18;H05K3/12;H05K3/20;H05K3/46 |
主分类号 |
H01L21/4763 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|