发明名称 Interconnect substrate, semiconductor device, methods of manufacturing the same, circuit board, and electronic equipment
摘要 A first conductive layer is formed. An insulating layer is formed so that at least a part of the insulating layer is disposed on the first conductive layer. A second conductive layer is formed so that at least a part of the second conductive layer is disposed on the insulating layer over the first conductive layer. Each of the first and second conductive layers is formed by discharging drops of a solvent containing fine particles of a conductive material. The insulating layer is formed by discharging drops of a solvent containing fine particles of an insulating material.
申请公布号 US7413975(B2) 申请公布日期 2008.08.19
申请号 US20060279078 申请日期 2006.04.07
申请人 SEIKO EPSON CORPORATION 发明人 OTSUKI TETSUYA
分类号 H01L21/4763;H05K3/10;H01L21/48;H01L23/12;H01L23/13;H01L23/495;H01L23/498;H05K1/18;H05K3/12;H05K3/20;H05K3/46 主分类号 H01L21/4763
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