IMPROVEMENT OF PLASMA PROCESS UNIFORMITY OF ENTIRE WAFER THROUGH DISTRIBUTION OF POWER OF A PLURALITY OF VHF SOURCES

摘要

PROBLEM TO BE SOLVED: To provide a method for processing a workpiece in a plasma reactor chamber having electrodes including at least a ceiling electrode and a workpiece supporting electrode.

SOLUTION: The method for processing a workpiece comprises a step for coupling the respective RF power supplies of VHF frequencies f1 and f2 with (a) respective electrodes or (b) one common electrode where the f1 is high enough to generate uneven plasma ion distribution of high center, and the f2 is low enough to generate uneven plasma ion distribution of low center. The method further comprises a step for controlling the plasma ion density distribution by regulating the ratio of RF parameters at the frequencies f1 and f2, wherein the RF parameter is one of RF power, RF voltage and RF current.

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