| 摘要 |
<p>A method for modifying a defect of a photomask is provided to prevent a damage of a material layer pattern while modifying and removing the defect by forming a spacer-formed etch stop layer at a side of the material layer pattern on a photomask. A material layer pattern transfers a predetermined circuit pattern. A photomask substrate(200) having a defect(206) is formed between the material layer patterns. An etch stop layer(208) exposing the defect is formed on the photomask substrate. The material layer pattern is comprised of a phase shift layer(202) and a shield layer pattern(204). The phase shift layer shifts a phase of transmitted light. The shield layer pattern blocks the transmitted light. The phase shift layer is formed with a molybdenum silicon nitride layer(MoSiN). The shield layer pattern is formed of chrome(Cr). The etch stop layer is formed with an etching selectivity with respect to the material layer pattern in a predetermined etching process for removing the defect.</p> |
