| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce a material cost and man-hours and to eventually improve a yield and to reduce the cost. <P>SOLUTION: The light control device includes a thin film transistor; and a light control element including an electrode 104 electrically connected to the thin film transistor, in which a semiconductor region 102 of the thin film transistor and a pixel electrode 104 are composed of the same semiconductor layer, and the same semiconductor layer is an amorphous oxide layer including at least one of In, Ga, and Zn. The portion which is the pixel electrode of the semiconductor layer is lower in resistivity than that in the semiconductor region. Also, the region of the resistivity can be used in a holding charge accumulation capacitor section as well. In addition, the electrode can be extended and be used as a wiring as well. The optical control device can use an electroluminescence element, a liquid crystal cell, electrophoretic type particles, etc. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
