| 摘要 |
PROBLEM TO BE SOLVED: To prevent a phenomenon in which a lateral striped pattern which has cycles of a sharing number is formed with intense incident light when a charge detection unit of an amplification type solid-state imaging apparatus is shared by a plurality of photoelectronic converting elements. SOLUTION: In the amplification type solid-state imaging apparatus, pixel units (in first to fourth rows) comprising the photoelectric converting elements PD1 to PD4 and transfer transistors T1 to T4 transferring signal charges from the respective photoelectric converting elements PD1 to PD4 to a charge detection unit FD are connected to the one charge detection unit FD. The amplification type solid-state imaging apparatus has a reset transistor T3 which resets the potential of the charge detection unit FD and an amplifying transistor T2 which amplifies and reads out the potential of the charge detection unit FD. When one of the pixel units sharing the charge detection unit FD is placed in shutter operation in operation for determining the start of a photogenerated charge storage period of each pixel unit by the shutter operation and determining the end of the photogenerated charge storage period of the pixel unit by read operation, the remaining pixel units which share the charge detection unit FD and are before the shutter operation are placed in the shutter operation. COPYRIGHT: (C)2008,JPO&INPIT
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