THIN FILM FORMING METHOD USING ATOMIC LAYER DEPOSITION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a thin film forming method capable of producing a stoichiometrically excellent film by inhibiting formation of undesirable impurities in an atomic layer deposition method. SOLUTION: The thin film forming method using the atomic layer deposition method includes the steps of: injecting a first reactant containing a metallic element and a ligand in a reaction chamber and chemisorbing the first reactant on a substrate; purging the reaction chamber by an inert gas to remove the physisorbed first reactant; injecting a second reactant not containing a hydroxyl group in the reaction chamber so that oxygen of the second reactant and the metallic element are bound together by a chemical reaction of the first and second reactants, and the chemisorbed first reactant becomes a metal-oxygen atomic layer by separating the ligand from the first reactant; purging the reaction chamber by the inert gas to remove the physisorbed second reactant; and injecting a third reactant in the reaction chamber so that oxygen which is a constituting element of the third reactant and the metallic element are bound together by a chemical reaction of the remainder of the chemisorbed first reactant and the third reactant, and consequently forming a metal-oxide film in an atomic layer by making the remainder of the chemisorbed first reactant a metal-oxygen atomic layer by separating the ligand from the first reactant, with the generation of hydroxyl group held in an suppressed state. COPYRIGHT: (C)2008,JPO&INPIT