| 摘要 |
A method of manufacturing a semiconductor device including forming a pad oxide layer on a semiconductor substrate, forming a spacer oxide layer pattern on sidewalls of the pad oxide layer, and forming a nitride layer on the pad oxide layer. The method further includes forming a groove in the nitride layer by selectively removing the spacer oxide layer pattern, forming a trench in a region where the groove is formed, and filling the trench with a thermal oxide layer so as to form a shallow trench isolation (STI) layer. In the method, the line width of the STI layer depends on the thickness of the spacer oxide layer, and so the STI layer can be formed to a line width W smaller than a design rule.
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