| 摘要 |
A method for fabricating a semiconductor device includes forming an isolation structure using a pad insulation layer for device isolation. A hard mask pattern forming a plurality of recesses is formed over an upper portion of a substrate including the pad insulation layer. The pad insulation layer and the substrate are etched using the hard mask pattern as a mask to form a certain recess pattern. A cell channel ion implantation process is performed using a patterned pad insulation layer as an ion implantation barrier to form a plurality of local channel regions. A gate pattern is then formed over the certain recess pattern.
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