SEMICONDUCTOR DEVICE WITH MULTI LAYER DIFFUSION BARRIER AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device including a multi diffusion barrier layer is provided to reduce the height of a gate stack by using a multi thin film including Ti, W, Si and N or a multi thin film including nitrogen as a diffusion barrier layer between a tungsten layer and a polysilicon layer. A first diffusion barrier layer in which a metal silicide layer and a nitrogen-containing metal layer(22B) are sequentially stacked is formed on a first conductive layer(21). A second diffusion barrier layer including at least a nitrogen-containing metal silicide layer(22C) is formed on the first diffusion barrier layer. A second conductive layer(23) is formed on the second diffusion barrier layer. A nitrogen-containing metal layer and the nitrogen-containing metal silicide layer can be sequentially stacked in the second diffusion barrier layer.