| 摘要 |
<p>A method for fabricating a flash memory device is provided to improve uniformity between a cell region and a peripheral region by removing a step generated in an interlayer dielectric in the cell region and the peripheral region before a contact plug is formed. A first polysilicon layer(28) and an ONO(oxide nitride oxide) layer(29) are formed in a cell region of a flash memory device wherein the cell region and a peripheral region are formed on a semiconductor substrate(20). A second polysilicon layer(30a,30b) is respectively formed in the cell region and the peripheral region of the semiconductor substrate. Spacers(32) are formed at both sides of the second polysilicon layer. A source/drain region(36) is formed on the semiconductor substrate. An interlayer dielectric(34a,34b) is formed on the semiconductor substrate. An oxide CMP process is performed to remove a step of the interlayer dielectric generated between the cell region and the peripheral region. The interlayer dielectric is patterned to form a via hole. A contact plug is formed in the via hole.</p> |
