| 摘要 |
A chuck and a substrate processing apparatus having the same are provided to maintain a uniform property of the substrate by actively adjusting a ratio of bias RF powers applied on center and edge portions of the chuck. A substrate processing apparatus includes a chamber(110), a chuck(120), a gas spray unit, a plasma generator, and first and second bias RF sources(150,160). The chamber forms a constant reaction space therein. The chuck is installed inside the chamber and includes first and second blocks. The gas spray unit sprays original materials into the chamber. The plasma generator is arranged outside the chamber and generates plasma inside the chamber. The first and second bias RF sources are connected to the first and second blocks, respectively. The second block surrounds a side portion of the first block and is insulated from the first block.
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