APPARATUS AND METHOD FOR PLASMA PROCESSING AND SEMICONDUCTOR SUBSTRATE MANUFACTURED THEREBY

摘要

A plasma processing method is provided to effectively restrain the damage to a substrate during a plasma process by forming high-density plasma by a multiple core plasma generating apparatus and by uniformly and stably maintaining high-density plasma without causing any field on the substrate. A plasma reaction unit(100) for performing a plasma treatment on a substrate(300) to be processed is prepared. A multiple core plasma generating unit(200) generates inductive electromotive force for generating plasma in the plasma reaction unit. The substrate to be processed is prepared on a substrate support unit(110) in the plasma reaction unit, and the inside of the plasma reaction unit is set to be a process pressure. Gas for performing a plasma treatment on the substrate to be processed is introduced. The plasma is excited by the inductive electromotive force of the multiple core plasma generating unit. A plasma treatment is performed on the substrate to be processed by the excited plasma wherein the substrate to be processed placed on the substrate support unit maintains a zero potential. The plasma treatment can be one of an oxide process, a nitride process or an oxynitride process.