MULTI-STACK MEMORY DEVICE

摘要

A multi-stack memory device is provided to increase a recording density of the multi-stack memory device by coupling a storage node or a line with plural transistors in the memory device. A multi-stack memory device includes storage media groups(S1-S4) and plural transistors(T1-T4). The storage media groups are laminated in a vertical direction and form plural columns. The transistors are connected to the storage media groups. The transistors, which are connected to the storage media in at least two columns, are coupled with each other through common lines. The common line is a gate line or a bit line. The storage media groups are grouped for every two columns. The storage media in the respective groups are connected to the transistors, which are coupled with each other through the common lines.