METALLIZATION METHOD OF SEMICONDUCTOR DEVICE

摘要

A method for forming a metal wire of a semiconductor device is provided to prevent a bridge between wires by removing a scratch after a copper CMP(Chemical Mechanical Polishing) process. A copper layer(10) is formed on a semiconductor substrate on which a via contact hole and a trench pattern are formed. A CMP process is performed on the copper layer. A barrier metal layer(40) is deposited. A photolithography process is performed. A silicon nitride layer and an interlayer dielectric layer(30) are deposited. A photolithography process is performed to form a via contact hole and a trench pattern and then to form a copper layer. A CMP process is performed. The barrier metal layer is made of Ta metal whose thickness is 100 - 200 Å. The barrier metal layer is removed through a dry etching process. An over-etching of an inter-metal dielectric layer is performed.