| 摘要 |
The present invention discloses a hybrid-level three-dimensional memory (HL-3DM). Some of its memory levels are separated, i.e. there is an inter-level dielectric between adjacent memory levels; while others are interleaved, i.e. adjacent memory levels share address-selection lines. The HL-3DM is particularly suitable for 3D-M with a large number of memory levels (m).
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