| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus and a plasma processing method supplying sufficient power to plasma, avoiding risk of breaking a pulse wave power source by the reflected power, eliminating emission delay of plasma, and depositing a film having excellent performance. <P>SOLUTION: The plasma processing apparatus comprises: a plasma emission detection means 50 for detecting that plasma is emitted inside a plasma processing chamber 10; a first matching unit 30-1 for matching the impedance before emitting plasma; a second matching unit 30-2 for matching the impedance after emitting plasma and having the impedance of a matching circuit fixed in advance; and a switching means 40 for switching the first matching unit 30-1 to the second matching unit 30-2 when emission of plasma is detected by the plasma emission detection means 50. <P>COPYRIGHT: (C)2008,JPO&INPIT |
