| 摘要 |
PROBLEM TO BE SOLVED: To provide a Schottky barrier diode which has a structure to improve a dielectric breakdown voltage. SOLUTION: The Schottky barrier diode 11 includes a conductive nitride support substrate 13, an n<SP>-</SP>type gallium nitride family semiconductor portion 15, an insulator 17, a first electrode 19. A third portion 21c of a second region 15b of the n<SP>-</SP>type gallium nitride family semiconductor portion 15 is surrounded by the insulator 17 positioned on a first portion 21a, and a Schottky junction 23 is formed at a first conductive portion 19a of the first electrode 19. Moreover, a second conductive portion 19b of the first electrode 19 is provided on the insulator 17. When a reverse bias is applied to the Schottky barrier diode 11, strength of an electric field near an edge of the Schottky junction 23 becomes low by overlap of an electric field from the first conductive portion 19a and an electric field from the second conductive portion 19b. COPYRIGHT: (C)2008,JPO&INPIT |
