发明名称 COMPOSITION FOR CLEANING MICROELECTRONICS CONTAINING HALOGEN OXYGEN ACID, SALT, AND DERIVATIVE THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a cleaning composition for cleaning microelectronic substrates, and specifically the cleaning composition useful with and having improved compatibility with the microelectronic substrates characterized by silicon dioxide, sensitive low-κor high-κdielectrics and copper, tungsten, tantalum, nickel, gold, cobalt, palladium, platinum, chromium, ruthenium, rhodium, iridium, hafnium, titanium, molybdenum, tin and other metallizations, as well as Al or Al (Cu)-coated substrates and advanced interconnection technologies. SOLUTION: The microelectronic cleaning compositions containing halogen oxygen acid, salt of the acid and derivatives thereof are used. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008124494(A) 申请公布日期 2008.05.29
申请号 JP20080004627 申请日期 2008.01.11
申请人 MALLINCKRODT BAKER INC 发明人 HSU CHIEN-PIN SHERMAN
分类号 G03F7/32;H01L21/027;B08B3/14;C11D1/00;C11D3/26;C11D3/39;C11D3/395;C11D3/43;C11D7/08;C11D7/32;C11D7/50;C11D7/54;C11D11/00;G03F7/42;H01L21/304 主分类号 G03F7/32
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