| 摘要 |
The semiconductor memory device includes a memory layer having a plurality of memory cells for storing data, and at least one bit registering layer for recording status information on whether the memory cells are defective. The memory layer may be a nanometer-scale memory device, such as a molecular memory, a carbon nanotube memory, an atomic memory, a single electron memory, or a memory fabricated by a chemical bottom-up method, etc. |
