| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a halftone phase shift mask blank or the like in which the transmittance of a phase adjusting layer, particularly in a wavelength range from 240 nm to 650 nm, can be effectively attenuated while suppressing a decrease in the transmittance at the exposure wavelength to a small amount. <P>SOLUTION: The halftone phase shift mask blank is used for manufacturing a phase shift mask to be used for the exposure and transfer of a fine pattern, wherein the phase shift mask comprises a light transmitting portion for transmitting exposure light and a phase shifter portion shifting a phase by a predetermined amount of the light which has passed through the above light transmitting portion, and the phase shift mask favorably maintains and improves the contrast of a pattern boundary transferred onto the surface of an exposure object by designing the optical characteristics of the mask in such a manner that light beams transmitting through the light transmitting portion and the phase shifter portion compensate with each other near the boundary of the above portions. The phase shift mask blank has a phase shifter film to form the above phase shifter portion on a transparent substrate, wherein the phase shifter film includes a film comprising a material containing at least silicon, carbon and metal. <P>COPYRIGHT: (C)2008,JPO&INPIT |
