| 摘要 |
<p>A method for the reduction of dislocations in silicon is described, the method comprising the steps of etching said silicon so as to selectively remove at least a part of the dislocation core extending into said silicon material from a free surface thereof. A further step of treating said etched silicon material by a technique to electrically passivate a surface formed due to removal of said at least part of the dislocation may also be carried out.</p> |
