STRUCTURE OF HETEROGENEOUS p-n JUNCTION BASED ON ZINC OXIDE NANOBARS AND SEMICONDUCTOR FILM

摘要

FIELD: physics. ^ SUBSTANCE: within the structure of heterogeneous p-n junction based on at least one zinc oxide nanobar of n-type conductivity and semiconductor film of p-type conductivity mounted on a substrate, semiconductor film is made of nickel oxide and is placed directly on substrate or on upper edges of nanobars. ^ EFFECT: technical result of invention is production of improved junction. ^ 5 cl, 7 dwg