| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a construction of a phase change memory that allows low current rewriting, and its manufacturing method. <P>SOLUTION: The phase change memory comprises an interlayer insulating film 9 and a plug 13 formed on one main surface of a silicon substrate 1, a phase change film 15 formed on the plug 13, and an upper part electrode film 16 formed on the phase change film 15. The phase change film 15 contacts an insulating film 17 in such region as the upper surface of the plug 13 is projected on the flat surface comprising the lower surface of the upper part electrode film 16. <P>COPYRIGHT: (C)2008,JPO&INPIT |
