发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR |
摘要 |
<p>A semiconductor device is provided to improve cohesion of a photocatalytic conductive layer in a region with high wettability and a conductive material formed on the region with high wettability by forming a region with different wettability on the photocatalytic conductive layer without performing a complex process. A photocatalytic conductive layer is formed on a substrate. A reaction layer is formed on the photocatalytic conductive layer. Ultraviolet rays(17) are irradiated to the surface of the photocatalytic conductive layer to form a region(18) with conductivity on the surface of the photocatalytic conductive layer wherein the region with conductivity has high wettability as compared with the reaction layer. The reaction layer can be formed by using a composition including a compound with an alkyl group or a composition including an organic silane.</p> |
申请公布号 |
KR20080034815(A) |
申请公布日期 |
2008.04.22 |
申请号 |
KR20070104621 |
申请日期 |
2007.10.17 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
MORISUE MASAFUMI |
分类号 |
H01L29/786;G02F1/136 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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