发明名称 Signal line structure of semiconductor device and method of manufacturing the same
摘要 An interconnection architecture, for a semiconductor device (having regions arranged to include at least an inner region, an intermediate region located at least aside the inner region, and an outer region located at least on a side of the intermediate region opposite to the inner region, includes: one or more pairs of first and second signal lines, each pair extending from the inner region into the intermediate region; first portions and second portions of the first and second signal lines being parallel, respectively, the first portions being located in the inner region; the first and second portion of at least the first signal line not being collinear; and an intra-pair line-spacing, d(i), for each pair including the following magnitudes, d2 in the inner region, and d2&prime; in the intermediate region, where d2<d2&prime;.
申请公布号 KR100823706(B1) 申请公布日期 2008.04.21
申请号 KR20060068418 申请日期 2006.07.21
申请人 发明人
分类号 H01L21/8242 主分类号 H01L21/8242
代理机构 代理人
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