发明名称 Processing method an apparatus for removing oxide film
摘要 Disclosed are a processing method and apparatus for removing a native oxide film formed on a surface of an object W. The surface of the object is exposed to activated gases formed from a N 2 gas (52), a H 2 gas (54) and a NF 3 (83) gas to bring about a reaction between the native oxide film formed on the surface of the object and the activated gases. As a result, a reaction film is formed. The reaction film thus formed is sublimated by heating (36) the object to a predetermined temperature, thereby to remove the native oxide film from the surface of the object. For forming the activated gases, the N 2 gas (52) and H 2 gas (54) are converted into a plasma and activated to form active species, followed by adding the NF 3 gas (80) to the active species to form an activated gas containing the NF 3 gas.
申请公布号 EP1909314(A1) 申请公布日期 2008.04.09
申请号 EP20070024972 申请日期 1998.05.29
申请人 TOKYO ELECTRON LIMITED 发明人 KOBAYASHI, YASUO
分类号 H01L21/302;H01L21/306;H01J37/32;H01L21/00;H01L21/205;H01L21/304;H01L21/3065;H01L21/311 主分类号 H01L21/302
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