发明名称 APPLICATION SPECIFIC SEMICONDUCTOR INTEGRATED CIRCUIT AND ITS MANUFACTURING METHOD THEREOF
摘要 An ASIC includes a first-wire extended in a first-direction and a second-wire extended in a parallel direction to the first-wire and both are placed on a first-wire layer; and a third-wire placed on a second-wire layer above the first-wire layer and is extended above the wire and above the second-wire in a second-direction which intersects the first-direction and passing through a first via-hole is connected to the first-wire, and a fourth-wire separated from the third-wire extended in a parallel direction above the first-wire and above the second-wire and a fifth-wire separated from both the third-wire and the fourth-wire and extended in a parallel direction in a smallest space and passing through a second via-hole is connected to the second-wire, wherein, one end of the fifth-wire is extended to the center between the second-wire and the first-wire from above the second-wire.
申请公布号 US2008074929(A1) 申请公布日期 2008.03.27
申请号 US20070838605 申请日期 2007.08.14
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SHIGA HITOSHI;SAKURAI KIYOFUMI;MIMA KENJI
分类号 G11C11/34;G06F17/50;H01L23/52 主分类号 G11C11/34
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